FDD86081-F085
MOSFET N-CH 100V 21A TO252-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDD86081-F085 is an N-Channel Power MOSFET designed for automotive applications. This AEC-Q101 qualified component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.7A at 25°C ambient and 21.4A at 25°C case temperature. With a maximum power dissipation of 3W (ambient) and 31.3W (case), the device exhibits a low Rds(on) of 31.5mOhm at 6A and 10V Vgs. Key parameters include Gate Charge (Qg) of 6.8 nC at 10V and Input Capacitance (Ciss) of 493 pF at 50V Vds. The MOSFET is housed in a TO-252-3 (DPAK) surface-mount package and operates across a temperature range of -55°C to 175°C. This component is suitable for power management solutions within the automotive sector.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta), 21.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 31.5mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 31.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 36µA |
| Supplier Device Package | TO-252 (DPAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 493 pF @ 50 V |
| Qualification | AEC-Q101 |
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