FDD8586
MOSFET N-CH 20V 35A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD8586 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device offers a 20V drain-source breakdown voltage and a continuous drain current capability of 35A at 25°C (Tc), with a maximum power dissipation of 77W (Tc). Key electrical characteristics include a low on-resistance of 5.5mOhm at 35A, 10V Vgs, and a gate charge of 48nC at 10V. It features a TO-252AA (DPAK) surface mount package, suitable for high-density board layouts. Operating temperature range is from -55°C to 155°C (TJ). This component finds utility in various industries including automotive and industrial power management.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 77W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 10 V |
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