FDD8580
MOSFET N-CH 20V 35A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD8580 is a PowerTrench® N-Channel MOSFET designed for demanding applications. Featuring a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 35A at 25°C (Tc), this device offers low on-resistance of 9mOhm at 35A, 10V (Vgs). The FDD8580 utilizes advanced PowerTrench® technology for optimized performance and efficiency. Its TO-252AA (DPAK) surface mount package facilitates compact board layouts. Key electrical parameters include a maximum power dissipation of 49.5W (Tc), a gate charge (Qg) of 27 nC at 10V, and input capacitance (Ciss) of 1445 pF at 10V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for power management, automotive, and industrial systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1445 pF @ 10 V |
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