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FDD8447L-F085

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FDD8447L-F085

MOSFET N-CH 40V 50A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD8447L-F085 is a PowerTrench® N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 40 V and a continuous Drain Current (Id) of 50 A at 25°C (Tc), with a maximum power dissipation of 65 W (Tc). The low on-resistance of 8.5 mOhm at 14 A and 10 V (Vgs) is achieved with drive voltages ranging from 4.5 V to 10 V. The TO-252AA (DPAK) surface mount package provides efficient thermal performance. Key electrical characteristics include a typical Gate Charge (Qg) of 52 nC at 10 V and an input capacitance (Ciss) of 1970 pF at 20 V (Vds). This device is AEC-Q101 qualified and rated for operation across a wide temperature range of -55°C to 175°C (TJ). The FDD8447L-F085 is suitable for automotive and industrial power management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1970 pF @ 20 V
QualificationAEC-Q101

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