FDD8445-F085P
MOSFET N-CH 40V 50A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDD8445-F085P is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C, with a maximum power dissipation of 79W. The low on-resistance of 8.7mOhm at 50A and 10V gate drive voltage, coupled with a gate charge of 59nC at 10V, ensures efficient switching performance. The TO-252AA surface mount package facilitates integration into compact designs. Qualified to AEC-Q101 automotive standards and operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for automotive, industrial, and power management systems.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4050 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
