FDD8444L-F085
MOSFET N-CH 40V 16A/50A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDD8444L-F085 is a PowerTrench® N-Channel MOSFET designed for demanding applications. This automotive-grade device features a 40V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 16A at 25°C ambient temperature, scaling to 50A under continuous drain at case temperature. With a maximum power dissipation of 153W at case temperature, it is suitable for high-power switching. The low on-resistance (Rds On) of 5.2mOhm at 50A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 60nC at 5V Vgs and input capacitance (Ciss) of 5530pF at 25V Vds. The device is housed in a TO-252AA (DPAK) surface-mount package and operates across a wide temperature range of -55°C to 175°C. This MOSFET is AEC-Q101 qualified, making it suitable for automotive electronics and other high-reliability systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 153W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5530 pF @ 25 V |
| Qualification | AEC-Q101 |
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