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FDD8444L-F085

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FDD8444L-F085

MOSFET N-CH 40V 16A/50A TO252AA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD8444L-F085 is a PowerTrench® N-Channel MOSFET designed for demanding applications. This automotive-grade device features a 40V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 16A at 25°C ambient temperature, scaling to 50A under continuous drain at case temperature. With a maximum power dissipation of 153W at case temperature, it is suitable for high-power switching. The low on-resistance (Rds On) of 5.2mOhm at 50A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 60nC at 5V Vgs and input capacitance (Ciss) of 5530pF at 25V Vds. The device is housed in a TO-252AA (DPAK) surface-mount package and operates across a wide temperature range of -55°C to 175°C. This MOSFET is AEC-Q101 qualified, making it suitable for automotive electronics and other high-reliability systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs5.2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)153W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds5530 pF @ 25 V
QualificationAEC-Q101

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onsemi’s core components include:

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