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FDD8444-F085

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FDD8444-F085

MOSFET N-CH 40V 145A TO252AA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD8444-F085 is a PowerTrench® series N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 145A at 25°C (Tc), with a maximum power dissipation of 153W (Tc). The low on-resistance (Rds On) of 5.2mOhm is achieved at 50A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 116 nC at 10V and an input capacitance (Ciss) of 6195 pF at 25V. The FDD8444-F085 is supplied in a TO-252AA surface mount package and is qualified to AEC-Q101 standards, making it suitable for automotive applications. It operates within a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C145A (Tc)
Rds On (Max) @ Id, Vgs5.2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)153W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6195 pF @ 25 V
QualificationAEC-Q101

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