FDD7N60NZTM
MOSFET N-CH 600V 5.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD7N60NZTM is a UniFET-II™ N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain current (Id) of 5.5 A at 25°C (Tc), with a maximum power dissipation of 90 W (Tc). The Rds On is specified at 1.25 Ohm maximum at 2.75 A and 10 V Vgs. Key characteristics include a Gate Charge (Qg) of 17 nC maximum at 10 V and Input Capacitance (Ciss) of 730 pF maximum at 25 V. The device is housed in a TO-252AA (DPAK) surface mount package and operates across an ambient temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supplies, lighting, and motor control systems.
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 25 V |
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