FDD6N50TM-WS
MOSFET N-CH 500V 6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ series FDD6N50TM-WS is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 6A at 25°C (Tc). With a maximum power dissipation of 89W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance (Rds On) of 900mOhm at 3A and 10V, optimized for minimal conduction losses. Key parameters include a gate charge (Qg) of 16.6 nC at 10V and input capacitance (Ciss) of 9400 pF at 25V. The FDD6N50TM-WS is housed in a TO-252AA (DPAK) surface mount package, facilitating compact board designs. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET finds application in power supplies, lighting, and motor control systems.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |