FDD6N50TM-F085
MOSFET N-CH 500V 6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDD6N50TM-F085 is a 500V N-Channel Power MOSFET designed for demanding applications. This component features a continuous drain current capability of 6A (Tc) and a maximum power dissipation of 89W (Tc). With a low Rds(on) of 900mOhm at 3A and 10V, it ensures efficient power transfer. The device's gate charge is specified at 16.6 nC (Max) at 10V. Fabricated with MOSFET technology, it offers a ±30V maximum gate-source voltage and a threshold voltage of 5V (Max) at 250µA. The FDD6N50TM-F085 is housed in a TO-252AA (DPAK) surface mount package, facilitating compact board designs. Qualified to AEC-Q101 standards, this MOSFET is suitable for automotive applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
