FDD6N50FTM
MOSFET N-CH 500V 5.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDD6N50FTM, an N-Channel UniFET™ MOSFET, offers a 500V drain-to-source breakdown voltage. This TO-252AA packaged device features a continuous drain current capability of 5.5A (Tc) at 25°C and a maximum power dissipation of 89W (Tc). The on-resistance (Rds On) is specified at 1.15 Ohm maximum at 2.75A and 10V gate drive. Key parameters include a gate charge (Qg) of 19.8 nC and input capacitance (Ciss) of 960 pF. Designed for surface mount applications, this component operates across a temperature range of -55°C to 150°C. It finds utility in power supply, lighting, and industrial control applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15Ohm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 25 V |
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