FDD6N25TF
MOSFET N-CH 250V 4.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD6N25TF is a UniFET™ N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 4.4A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 50W (Tc), it is suitable for demanding thermal environments. The MOSFET exhibits a low on-resistance (Rds On) of 1.1 Ohm maximum at 2.2A and 10V gate drive. Key electrical parameters include a Gate Charge (Qg) of 6 nC maximum at 10V and an Input Capacitance (Ciss) of 250 pF maximum at 25V. The device is housed in a TO-252AA (DPAK) surface mount package, facilitating automated assembly. Its operating temperature range spans from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and lighting control systems.
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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