FDD6N20TM
MOSFET N-CH 200V 4.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FDD6N20TM is a UniFET™ N-Channel Power MOSFET designed for efficient power switching applications. This component offers a 200V drain-to-source voltage (Vdss) and a continuous drain current of 4.5A (Tc) at 25°C, with a maximum power dissipation of 40W (Tc). The device features a low on-resistance of 800mOhm maximum at 2.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 6.1nC at 10V and input capacitance (Ciss) of 230pF maximum at 25V. The FDD6N20TM is housed in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET finds application in various industrial sectors including power supplies, motor control, and lighting.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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