FDD6782A
MOSFET N-CH 25V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDD6782A is a PowerTrench® N-Channel MOSFET designed for demanding applications. This TO-252AA packaged device offers a 25V drain-source voltage and a continuous drain current of 20A (Ta) at 25°C. With a low on-resistance of 10.5mOhm maximum at 14.9A and 10V, it ensures efficient power transfer. The MOSFET features a gate drive voltage range from 4.5V to 10V, a maximum gate charge of 27 nC at 10V, and input capacitance (Ciss) of 1065 pF at 13V. Maximum power dissipation is rated at 3.7W (Ta) and 31W (Tc). This component is suitable for industrial, computing, and consumer electronics power management solutions. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 14.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1065 pF @ 13 V |
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