FDD6780
MOSFET N-CH 25V 16.5A/30A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD6780 is a PowerTrench® series N-Channel MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 25 V and offers a continuous drain current (Id) of 16.5A at 25°C ambient and 30A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds On) of 8.5mOhm at 16.5A and 10V gate-source voltage. It supports gate drive voltages ranging from 4.5V to 10V, with a maximum gate charge (Qg) of 29 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1590 pF at 13V drain-source voltage. The FDD6780 is housed in a TO-252AA (DPAK) surface-mount package, with a maximum power dissipation of 3.7W (Ta) and 32.6W (Tc). Its operating temperature range is -55°C to 175°C. This MOSFET is commonly employed in automotive and industrial power management systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 32.6W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 13 V |
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