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FDD6760A

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FDD6760A

MOSFET N-CH 25V 27A/50A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD6760A is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25V and offers a Continuous Drain Current (Id) of 27A at ambient temperature and 50A when measured at the case temperature. With a low Rds On of 3.2mOhm at 27A and 10V Vgs, it minimizes conduction losses. The device supports a wide range of gate drive voltages from 4.5V to 10V and has a maximum Gate Charge (Qg) of 62 nC. Its high power dissipation capability, 3.7W (Ta) and 65W (Tc), combined with a broad operating temperature range of -55°C to 175°C, makes it suitable for demanding environments. The TO-252AA (DPAK) surface mount package is ideal for compact board designs. This MOSFET finds application in power management, automotive, and industrial systems.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 27A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3170 pF @ 13 V

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