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FDD6685-G

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FDD6685-G

MOSFET N-CH 60V SUPERSOT6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD6685-G is a P-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device features a drain-source voltage (Vdss) of 30V and offers continuous drain current capabilities of 11A at 25°C ambient and 40A at 25°C case temperature. With a low on-resistance (Rds(on)) of 20mOhm at 11A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET utilizes advanced PowerTrench® technology to achieve superior Rds(on) and low gate charge (Qg) of 24 nC at 5V, facilitating fast switching speeds. Operating from a drive voltage range of 4.5V to 10V, the FDD6685-G is suitable for a wide array of demanding systems. It is packaged in a TO-252AA (DPAK) surface-mount configuration, ensuring efficient thermal dissipation with a maximum power dissipation of 1.6W at 25°C ambient. This component is commonly employed in automotive, industrial power supplies, and battery management systems where robust and efficient switching is critical. The operating temperature range is -55°C to 175°C.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs20mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1715 pF @ 15 V

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