FDD6670AS
MOSFET N-CH 30V 76A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD6670AS is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 76A at 25°C ambient temperature, with a maximum power dissipation of 70W. The device offers a low on-resistance of 8mOhm at 13.8A and 10V Vgs, achieved with a 4.5V to 10V drive voltage range. Key electrical characteristics include a gate charge (Qg) of 40 nC at 10V and an input capacitance (Ciss) of 1580 pF at 15V. The FDD6670AS is housed in a TO-252AA surface-mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Ta) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 13.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1580 pF @ 15 V |
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