FDD6637-F085
MOSFET P-CH 35V 13A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD6637-F085 is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 35V drain-source voltage (Vdss) and a continuous drain current (Id) of 21A at 25°C, with a maximum power dissipation of 68W. Its low on-resistance is specified at 11.6mOhm at 14A and 10V Vgs. The TO-252-3, DPAK (2 Leads + Tab), SC-63 package facilitates efficient surface mounting. Operating across a temperature range of -55°C to 150°C, this MOSFET is AEC-Q101 qualified, making it suitable for automotive and industrial markets requiring robust power switching. Drive voltage ranges from 4.5V to 10V, with a maximum gate source voltage (Vgs) of ±25V. Notable parameters include a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 2370 pF at 20V.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 20 V |
| Qualification | AEC-Q101 |
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