FDD6635
MOSFET N-CH 35V 15A/59A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD6635 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 35 V and supports continuous drain currents of 15 A at 25°C ambient and 59 A at 25°C case temperature. The FDD6635 exhibits a low on-resistance (Rds On) of 10 mOhm maximum at 15 A and 10 V gate drive. It is packaged in a TO-252AA (DPAK) surface-mount configuration, facilitating integration into compact designs. Operating from a gate drive voltage range of 4.5V to 10V, the device has a maximum gate charge of 36 nC and input capacitance (Ciss) of 1400 pF. The maximum power dissipation is 3.8 W (Ta) or 55 W (Tc). This MOSFET is suitable for use in power management, automotive, and industrial systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 20 V |
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