FDD6632
MOSFET N-CH 30V 9A D-PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi UltraFET™ FDD6632 is a 30V N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current (Id) rating of 9A at 25°C and a maximum power dissipation of 15W (Tc). With a low Rds On of 70mOhm at 9A and 10V Vgs, it minimizes conduction losses. The device supports a gate drive voltage range from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include a gate charge (Qg) of 4 nC at 5V and input capacitance (Ciss) of 255 pF at 15V. The FDD6632 is supplied in a TO-252AA (DPAK) surface mount package, suitable for high-density designs. Its operational temperature range is -55°C to 175°C (TJ). This component finds application in various sectors including industrial automation and consumer electronics.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 255 pF @ 15 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
