FDD6630A
MOSFET N-CH 30V 21A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDD6630A is a PowerTrench® series N-Channel MOSFET designed for efficient power management applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 21A at 25°C, with a maximum power dissipation of 28W. The on-resistance (Rds On) is specified at a maximum of 35mOhm at 7.6A and 10V Vgs. Key characteristics include a Gate Charge (Qg) of 7 nC maximum at 5V Vgs and an input capacitance (Ciss) of 462 pF maximum at 15V Vds. The FDD6630A utilizes a TO-252AA surface mount package, suitable for high-density board designs. Its operating temperature range is -55°C to 175°C. This component is commonly employed in automotive, industrial power control, and consumer electronics sectors. The device supports gate drive voltages from 4.5V to 10V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 7.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 462 pF @ 15 V |
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