FDD6512A
MOSFET N-CH 20V 10.7A/36A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD6512A is a PowerTrench® N-Channel MOSFET with a Drain-Source voltage of 20V. It offers a continuous drain current of 10.7A at 25°C ambient and 36A at 25°C case temperature. The device features a low on-resistance of 21mOhm maximum at 10.7A and 4.5V gate-source voltage. Maximum power dissipation is rated at 3.8W ambient and 43W case. Key parameters include a gate charge of 19nC at 4.5V and input capacitance of 1082pF at 10V. The FDD6512A is available in a TO-252-3, DPAK surface mount package, supplied on tape and reel. This component is suitable for applications in power management and consumer electronics.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1082 pF @ 10 V |
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