FDD6030L
MOSFET N-CH 30V 12A/50A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDD6030L is an N-Channel Power MOSFET from the PowerTrench® series, housed in a TO-252AA (DPAK) surface-mount package. This device features a maximum drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 12A at a case temperature of 25°C (ambient) and 50A at a case temperature of 25°C (continuous drain). The on-resistance (Rds On) is a maximum of 14.5mOhm at 12A and 10V gate-source voltage. Key parameters include gate charge (Qg) of 28 nC (max) at 5V and input capacitance (Ciss) of 1230 pF (max) at 15V drain-source voltage. Power dissipation is rated at 3.2W (ambient) and 56W (case). This MOSFET is suitable for applications in the automotive and industrial sectors. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 56W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 15 V |
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