FDD5N50UTM-WS
MOSFET N-CH 500V 3A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FRFET® N-Channel MOSFET, part number FDD5N50UTM-WS, features a 500V drain-source breakdown voltage and a continuous drain current of 3A at 25°C (Tc). This TO-252AA (DPAK) surface mount device offers a maximum on-resistance of 2O at 1.5A and 10V Vgs. It is constructed using advanced MOSFET technology, providing efficient switching characteristics with a typical gate charge of 15 nC at 10V. The component supports a wide operating temperature range from -55°C to 150°C (TJ) and has a maximum power dissipation of 40W (Tc). This device is commonly utilized in power supply units, motor control, and lighting applications within the industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: FRFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |