FDD5N50FTM-WS
MOSFET N-CH 500V 3.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDD5N50FTM-WS is an N-Channel Power MOSFET from the FRFET®, UniFET™ series, featuring a 500 V breakdown voltage and a continuous drain current capability of 3.5 A at 25°C (Tc). This TO-252AA packaged device offers a low on-resistance of 1.55 Ohm maximum at 1.75 A, 10 V, and a gate charge of 15 nC at 10 V. With a maximum power dissipation of 40 W (Tc), it is suitable for surface mount applications. Key parameters include a drain-to-source voltage (Vdss) of 500 V and a gate-source voltage (Vgs) tolerance of ±30 V. This component is widely utilized in power supply units, lighting, and motor control applications. The FDD5N50FTM-WS is supplied in a Tape & Reel (TR) package.
Additional Information
Series: FRFET ®, UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 1.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |