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FDD5810-F085

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FDD5810-F085

MOSFET N-CH 60V 7.4A/37A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD5810-F085 is a PowerTrench® series N-channel MOSFET designed for demanding applications. This device features a 60V drain-to-source voltage (Vdss) and offers a continuous drain current of 7.4A at ambient temperature and 37A at case temperature. With a maximum power dissipation of 72W at case temperature and a low on-resistance of 22mOhm at 32A and 10V gate drive, it ensures efficient power transfer. The MOSFET is qualified to AEC-Q101 standards, making it suitable for automotive applications, as well as industrial and power management systems. It is supplied in a TO-252AA (DPAK) surface-mount package and utilizes Metal Oxide technology. Key parameters include a gate charge (Qg) of 34nC at 10V and input capacitance (Ciss) of 1890pF at 25V. The operating temperature range is -55°C to 175°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.4A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 32A, 10V
FET Feature-
Power Dissipation (Max)72W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1890 pF @ 25 V
QualificationAEC-Q101

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