FDD5614P
MOSFET P-CH 60V 15A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDD5614P is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 15A at 25°C ambient. With a maximum power dissipation of 3.8W (Ta) and 42W (Tc), it is suitable for thermal management in compact designs. The MOSFET exhibits a low on-resistance of 100mOhm maximum at 4.5A and 10V Vgs. Key electrical characteristics include input capacitance (Ciss) of 759pF at 30V and gate charge (Qg) of 24nC at 10V. The FDD5614P is available in a TO-252AA surface mount package, ideal for automated assembly. It operates across a temperature range of -55°C to 175°C. This component finds utility in automotive, industrial power control, and power management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 759 pF @ 30 V |
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