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FDD4685-F085P

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FDD4685-F085P

MOSFET P-CH 40V 32A TO252

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi PowerTrench® P-Channel MOSFET, part number FDD4685-F085P, offers a 40V drain-to-source voltage with a continuous drain current capability of 32A at 25°C (Tc). This surface mount device, packaged in a TO-252AA (DPAK), features a maximum power dissipation of 83W (Tj) and a low on-resistance of 27mOhm at 8.4A and 10V Vgs. With a gate charge of 27 nC at 5V, this MOSFET is designed for efficient power switching. The device operates across a wide temperature range of -55°C to 175°C (Tj) and meets AEC-Q101 qualification, making it suitable for automotive applications. Key parameters include a gate-source voltage tolerance of ±20V and a threshold voltage of 3V at 250µA.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 8.4A, 10V
FET Feature-
Power Dissipation (Max)83W (Tj)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2380 pF @ 20 V
QualificationAEC-Q101

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