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FDD4685-F085

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FDD4685-F085

MOSFET P-CH 40V 8.4A/32A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD4685-F085 is a P-Channel PowerTrench® MOSFET designed for demanding applications. This TO-252AA packaged device offers a 40V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 8.4A at 25°C ambient (Ta) and 32A at 25°C case (Tc). With a maximum power dissipation of 83W (Tc) and a low Rds(on) of 27mOhm at 8.4A and 10V, it is suitable for high-efficiency power switching. Key parameters include a gate charge (Qg) of 27nC at 5V and input capacitance (Ciss) of 2380pF at 20V. The FDD4685-F085 is AEC-Q101 qualified, making it appropriate for automotive applications. This component utilizes a surface mount configuration and operates within a temperature range of -55°C to 150°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 8.4A, 10V
FET Feature-
Power Dissipation (Max)83W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2380 pF @ 20 V
QualificationAEC-Q101

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