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FDD45AN06LA0

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FDD45AN06LA0

MOSFET N-CH 60V 5.2A/25A TO252AA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDD45AN06LA0 is a PowerTrench® N-Channel MOSFET designed for efficient power management. This component features a Drain-to-Source Voltage (Vdss) of 60 V and supports continuous drain current of 5.2 A at 25°C ambient and 25 A at 25°C case temperature, with a maximum power dissipation of 55W (Tc). The low on-resistance (Rds On) is specified at a maximum of 36mOhm at 25A and 10V. Key parameters include a gate charge (Qg) of 11 nC (max) at 5 V and input capacitance (Ciss) of 880 pF (max) at 25 V. This MOSFET is packaged in a TO-252AA (DPAK) surface-mount configuration and operates across a wide temperature range of -55°C to 175°C. It finds application in various power conversion circuits and general-purpose switching applications.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)55W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds880 pF @ 25 V

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