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FDD4243-F085P

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FDD4243-F085P

MOSFET P-CH 40V 14A TO252

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDD4243-F085P is a P-Channel PowerTrench® MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 14A at 25°C. The device offers a low on-resistance (Rds On) of 44mOhm at 6.7A and 10V Vgs, with a maximum power dissipation of 50W. It supports gate drive voltages from 4.5V to 10V and has a gate charge (Qg) of 29nC maximum at 10V. The FDD4243-F085P utilizes MOSFET technology and is housed in a TO-252AA (DPAK) surface mount package. Qualified to AEC-Q101 standards and rated for automotive grade, this device is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 175°C.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs44mOhm @ 6.7A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1550 pF @ 20 V
QualificationAEC-Q101

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