FDD4141-F085P
MOSFET P-CH 40V 10.8A/50A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's FDD4141-F085P is a P-Channel PowerTrench® MOSFET designed for demanding automotive applications. This device features a 40V drain-to-source voltage (Vdss) and offers continuous drain current capabilities of 10.8A at a 25°C ambient temperature (Ta) and 50A at a 25°C case temperature (Tc). With a maximum power dissipation of 2.4W (Ta) and 69W (Tc), it is suitable for high-power switching. The TO-252AA package facilitates surface mounting, and its low on-resistance of 12.3mOhm at 12.7A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key characteristics include a gate charge (Qg) of 50 nC maximum at 10V Vgs and input capacitance (Ciss) of 2775 pF maximum at 20V Vds. The device is AEC-Q101 qualified, ensuring reliability in automotive environments. It operates within a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages up to ±20V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.8A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2775 pF @ 20 V |
| Qualification | AEC-Q101 |
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