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FDD4141-F085

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FDD4141-F085

MOSFET P-CH 40V 10.8A/50A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD4141-F085, a P-Channel PowerTrench® MOSFET, offers a 40V drain-to-source breakdown voltage. This device features a continuous drain current capability of 10.8A at ambient temperature (Ta) and 50A at case temperature (Tc). Its low on-resistance is specified at 12.3mOhm maximum at 12.7A and 10V gate-source voltage. The maximum gate charge (Qg) is 50 nC at 10V. Designed for surface mounting in a TO-252AA package, it supports a wide operating temperature range of -55°C to 150°C. Power dissipation is rated at 2.4W (Ta) and 69W (Tc). This component is AEC-Q101 qualified, making it suitable for automotive applications. Typical drive voltages for optimal on-resistance are between 4.5V and 10V.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs12.3mOhm @ 12.7A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2775 pF @ 20 V
QualificationAEC-Q101

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