FDD3N50NZTM
MOSFET N-CH 500V 2.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's FDD3N50NZTM is an N-Channel UniFET-II™ MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 2.5A (Tc) at 25°C. The Rds On is specified at a maximum of 2.5 Ohms at 1.25A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 8 nC at 10V and an Input Capacitance (Ciss) of 280 pF at 25V. With a maximum power dissipation of 40W (Tc), this MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. It is suitable for use in power supply, lighting, and industrial control applications. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: UniFET-II™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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