FDD3N40TF
MOSFET N-CH 400V 2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDD3N40TF is a UniFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 2 A at 25°C. The Rds On is specified at a maximum of 3.4 Ohms at 1 A and 10 V gate-source voltage. With a gate charge (Qg) of 6 nC and input capacitance (Ciss) of 225 pF, it offers efficient switching characteristics. The device is packaged in a TO-252-3, DPAK surface-mount package, suitable for automated assembly. Maximum power dissipation is 30 W at 25°C (Tc). Operating temperature range is -55°C to 150°C. This MOSFET is utilized in power supply units, lighting, and industrial applications requiring robust high-voltage switching.
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 25 V |
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