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FDD3682-F085

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FDD3682-F085

MOSFET N-CH 100V 5.5/32A TO252AA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDD3682-F085 is a PowerTrench® N-Channel MOSFET designed for demanding applications. This device features a 100V Drain-Source Voltage (Vdss) and offers a continuous drain current of 5.5A at ambient temperature (Ta) and 32A at case temperature (Tc). With a maximum power dissipation of 95W (Tc), it is suitable for power management solutions. The MOSFET exhibits a low Rds(On) of 36mOhm at 32A and 10V, facilitated by a 10V gate drive. Key parameters include a maximum gate charge (Qg) of 28 nC at 10V and an input capacitance (Ciss) of 1250 pF at 25V. The TO-252AA (DPAK) package facilitates surface mounting. This component is AEC-Q101 qualified and designed for automotive applications, including power conversion and motor control. Operating temperature ranges from -55°C to 175°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 32A, 10V
FET Feature-
Power Dissipation (Max)95W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 25 V
QualificationAEC-Q101

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