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FDD3682

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FDD3682

MOSFET N-CH 100V 5.5/32A TO252AA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDD3682 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and offers a continuous drain current (Id) of 5.5 A at 25°C ambient temperature, scaling to 32 A at 25°C case temperature. With a maximum power dissipation of 95 W (Tc), it is suitable for demanding thermal environments. The on-resistance (Rds On) is specified at a maximum of 36 mOhm at 32 A and 10 Vgs. Key parameters include a gate charge (Qg) of 28 nC at 10 V and input capacitance (Ciss) of 1250 pF at 25 V. This device operates across a temperature range of -55°C to 175°C (TJ) and is packaged in a TO-252AA surface-mount configuration, supplied on tape and reel. The FDD3682 finds utility in various industrial sectors, including motor control and power supply designs.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 32A, 10V
FET Feature-
Power Dissipation (Max)95W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 25 V

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