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FDD2572-F085

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FDD2572-F085

MOSFET N-CH 150V 4A/29A TO252AA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi PowerTrench® FDD2572-F085 is an N-Channel MOSFET engineered for demanding applications. This component features a 150V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 4A at ambient temperature (Ta) and 29A at case temperature (Tc). With a maximum power dissipation of 135W (Tc) and a low on-resistance (Rds On) of 54mOhm at 9A and 10V, it ensures efficient power handling. The device supports drive voltages between 6V and 10V, with a gate charge (Qg) of 34 nC at 10V. Specified with AEC-Q101 qualification and an automotive grade, it is suitable for automotive applications. The FDD2572-F085 is housed in a TO-252AA package, designed for surface mounting and supplied on tape and reel. Its operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs54mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)135W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1770 pF @ 25 V
QualificationAEC-Q101

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