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FDD24AN06LA0-F085

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FDD24AN06LA0-F085

MOSFET N-CH 60V 7.1A/40A TO252AA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's FDD24AN06LA0-F085 is a PowerTrench® N-Channel MOSFET designed for demanding applications. This automotive-grade component features a 60V drain-source breakdown voltage and offers continuous drain current capabilities of 7.1A at ambient temperature (Ta) and 40A at case temperature (Tc), with a maximum power dissipation of 75W at Tc. The low on-resistance, specified at 19mOhm maximum for 40A and 10V Vgs, ensures efficient power transfer. Key parameters include a gate charge (Qg) of 21 nC maximum at 5V Vgs and input capacitance (Ciss) of 1850 pF maximum at 25V Vds, with a threshold voltage (Vgs(th)) of 2V at 250µA. Operating across a wide temperature range of -55°C to 175°C, this AEC-Q101 qualified device is available in a TO-252AA surface mount package, supplied on tape and reel. This MOSFET is suitable for automotive and industrial power management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.1A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)75W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1850 pF @ 25 V
QualificationAEC-Q101

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