FDD16AN08A0-F085
MOSFET N-CH 75V 9A/50A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDD16AN08A0-F085 is an N-Channel MOSFET from the UltraFET™ series, designed for demanding applications. This AEC-Q101 qualified component features a drain-to-source voltage (Vdss) of 75V and offers a continuous drain current (Id) of 9A at 25°C ambient temperature, scaling to 50A at 25°C case temperature. With a maximum power dissipation of 135W (Tc) and a low on-resistance (Rds On) of 16mOhm at 50A and 10V, it ensures efficient power transfer. The device operates within a temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 47 nC at 10V and input capacitance (Ciss) of 1874 pF at 25V. Available in a TO-252AA surface mount package, this MOSFET is suitable for automotive, industrial, and power management systems requiring robust switching performance.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1874 pF @ 25 V |
| Qualification | AEC-Q101 |
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