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FDD120AN15A0-F085

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FDD120AN15A0-F085

MOSFET N-CH 150V 14A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDD120AN15A0-F085 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 14A at 25°C, with a maximum power dissipation of 65W at the same temperature. The Rds On is specified at a maximum of 120mOhm at 4A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 743 pF at 25V. The MOSFET is housed in a TO-252AA (DPAK) surface mount package and operates across a wide temperature range of -55°C to 175°C. Qualified to AEC-Q101 standards, this component is suitable for automotive and industrial power switching applications.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs120mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds743 pF @ 25 V
QualificationAEC-Q101

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