Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

FDD120AN15A0

Banner
productimage

FDD120AN15A0

MOSFET N-CH 150V 2.8A/14A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's PowerTrench® series FDD120AN15A0 is an N-Channel MOSFET designed for demanding applications. This surface mount component in a TO-252AA package offers a Drain-to-Source Voltage (Vdss) of 150V. It features a continuous drain current of 2.8A at 25°C ambient and 14A at 25°C case temperature, with a maximum power dissipation of 65W (Tc). The Rds(On) is specified at a maximum of 120mOhm at 4A, 10V. Key parameters include a gate charge (Qg) of 14.5 nC (max) at 10V and input capacitance (Ciss) of 770 pF (max) at 25V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, motor control, and automotive applications.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.8A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs120mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)65W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy