FDD10N20LZTM
MOSFET N-CH 200V 7.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's FDD10N20LZTM is an N-Channel UniFET™ MOSFET designed for efficient power switching applications. This component features a 200V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7.6A at 25°C (Tc). With a maximum power dissipation of 83W (Tc), it is suitable for demanding thermal environments. The Rds(On) is specified at 360mOhm maximum at 3.8A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 16 nC at 10V and input capacitance (Ciss) of 585 pF at 25V. This device utilizes TO-252AA packaging for surface mounting and operates across a temperature range of -55°C to 150°C. The FDD10N20LZTM is commonly found in power supply, lighting, and industrial motor control applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 25 V |
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