FDD10AN06A0-F085
MOSFET N-CH 60V 11A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDD10AN06A0-F085 is a PowerTrench® series N-channel MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and supports a continuous drain current of 11A at 25°C, with a maximum power dissipation of 135W at the case. The low on-resistance of 10.5mOhm at 50A and 10V gate-source voltage, coupled with a gate charge of 37nC at 10V, indicates efficient switching characteristics.
The device is housed in a TO-252AA (DPAK) surface mount package, facilitating integration into compact designs. Its operating temperature range of -55°C to 175°C (TJ) and AEC-Q101 qualification make it suitable for automotive and other high-reliability environments. Key parameters include a 10V recommended gate drive voltage and a maximum gate-source voltage of ±20V. Input capacitance (Ciss) is 1840pF at 25V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1840 pF @ 25 V |
| Qualification | AEC-Q101 |