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FDD107AN06LA0

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FDD107AN06LA0

MOSFET N-CH 60V 3.4A/10.9A TO252

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDD107AN06LA0 is an N-Channel Power MOSFET from the PowerTrench® series, offered in a TO-252AA package. This device features a Drain-Source Voltage (Vdss) of 60V and supports continuous drain current (Id) of 3.4A at 25°C (ambient) and 10.9A at 25°C (case). With a maximum power dissipation of 25W (Tc), it is suitable for applications requiring efficient power switching. The Rds On is specified at 91mOhm maximum at 10.9A and 10V. Key parameters include a gate charge (Qg) of 5.5 nC maximum at 5V and input capacitance (Ciss) of 360 pF maximum at 25V. This component is designed for surface mounting and operates across a temperature range of -55°C to 175°C. The FDD107AN06LA0 finds application in areas such as consumer electronics and power management systems.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Ta), 10.9A (Tc)
Rds On (Max) @ Id, Vgs91mOhm @ 10.9A, 10V
FET Feature-
Power Dissipation (Max)25W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs5.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 25 V

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