FDC8884
MOSFET N-CH 30V 6.5/8A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDC8884 is a PowerTrench® N-Channel MOSFET designed for efficient power switching applications. This device features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current of 6.5A at 25°C ambient and 8A at 25°C case temperature. With a low on-resistance of 23mOhm at 6.5A and 10V Vgs, it minimizes conduction losses. The MOSFET is packaged in a SuperSOT™-6 (SOT-23-6 Thin) for compact, surface-mount designs. Key electrical parameters include a maximum gate charge (Qg) of 7.4 nC at 10V and a maximum input capacitance (Ciss) of 465 pF at 15V. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 1.6W at 25°C ambient. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta), 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 465 pF @ 15 V |
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