FDC655BN-G
MOSFET N-CH 30V 6.3A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDC655BN-G is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 6.3A at 25°C (Ta), with a maximum power dissipation of 800mW (Tc). The Rds(On) is specified at a low 25mOhm maximum at 6.3A and 10V gate drive. Key parameters include a gate charge (Qg) of 13nC (max) at 10V and input capacitance (Ciss) of 620pF (max) at 15V. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V and threshold voltage (Vgs(th)) of 3V at 250µA. Packaged in a SuperSOT™-6 (SOT-23-6 Thin, TSOT-23-6) for surface mounting, it operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in industrial and automotive sectors for power management solutions.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 6.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 15 V |
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