FDC642P-F085
MOSFET P-CH 20V 4A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDC642P-F085 is a P-channel PowerTrench® MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage and supports a continuous drain current of 4A at 25°C (Ta). With a maximum on-resistance of 65mOhm at 4A and 4.5V Vgs, it offers efficient switching characteristics. The MOSFET is housed in a SuperSOT™-6 package, suitable for surface mount assembly. Key parameters include a gate charge of 16nC at 4.5V Vgs and input capacitance of 640pF at 10V Vds. This component is AEC-Q101 qualified, making it suitable for automotive applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
| Qualification | AEC-Q101 |
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