FDC638P-P
MOSFET N-CH 60V SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDC638P-P is a P-Channel PowerTrench® MOSFET designed for efficient power management. This device features a continuous drain current of 4.5A at 25°C (Ta) and a drain-source voltage (Vdss) of 20V. The SuperSOT™-6 package offers excellent thermal performance with a maximum power dissipation of 1.6W (Ta). Its Rds(On) is specified at 48mOhm maximum at 4.5A and 4.5V, indicating low conduction losses. Gate drive voltages range from 2.5V to 4.5V, with a maximum gate-source voltage of ±8V. Key characteristics include a maximum gate charge (Qg) of 14 nC at 4.5V and input capacitance (Ciss) of 1160 pF at 10V. This MOSFET is suitable for applications in consumer electronics and industrial power control systems. It is available in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 10 V |
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